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G3S065100P Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey

Diode Silicon Carbide Schottky 650 V 20A (DC) Through Hole TO-247AC

Attributes

Brand name, Manufacturer name, Manufacturer, MfrGlobal Power Technology-GPT
Extra Product NameG3S065100P Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
extraShipping, qtyInStock0
MPNG3S065100P
packaging, PackageCut Tape (CT)
SKU14322234
snippetDiode Silicon Carbide Schottky 650 V 20A (DC) Through Hole TO-247AC
tierMinQty210
tierMinQty330
tierMinQty490
tierPrice163.47000
tierPrice259.62400
tierPrice357.70067
tierPrice453.46911
CategoryDiscrete Semiconductor Products
Series-
Product StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)20A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 40 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 ?A @ 650 V
Capacitance @ Vr, F13500pF @ 0V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-247-2
Supplier Device PackageTO-247AC
Operating Temperature - Junction-55?C ~ 175?C

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