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BRIDGELUX BXW10M1K2H | Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W

BRIDGELUX BXW10M1K2H | Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6

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Attributes

Brand name, Manufacturer name, ManufacturerBRIDGELUX
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Unipolar transistors
CategoryL4N channel transistors
Extra Product NameBRIDGELUX BXW10M1K2H | Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
atoms, moq, multiple, tierMinQty11
jsonUrlData4f50613d85aadd044055382ccead3603.
jsonUrlData25739669013f153b7e7c6
keywordsBRIDGELUX, BXW10M1K2H
MPN, SKUBXW10M1K2H
qtyInStock0
snippetBRIDGELUX BXW10M1K2H | Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6
tierMinQty25
tierMinQty330
tierMinQty4150
tierMinQty51200
tierPrice17.28
tierPrice26.55
tierPrice35.79
tierPrice45.2
tierPrice54.5
Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current10A
Pulsed drain current40A
Power dissipation80.6W
CaseTO247-3
Gate-source voltage-3...20V
On-state resistance610m?
MountingTHT
Gate charge29nC
Kind of packagetube
Kind of channelenhanced

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMEBXW10M1K2H111 @ $7.28, 5 @ $6.55, 30 @ $5.79, 150 @ $5.20, 1200 @ $4.50