RYM002N05T2CL Rohm Semiconductor | Discrete Semiconductor Products | DigiKey
N-Channel 50 V 200mA (Ta) 150mW (Ta) Surface Mount VMT3
Attributes
| Brand name, Manufacturer name, Mfr, Brand | Rohm Semiconductor |
|---|---|
| Manufacturer | Rohm Semiconductor ROHM SEMICONDUCTOR ROHM Semiconductor |
| Extra Product Name | RYM002N05T2CL Rohm Semiconductor | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1, Item_package_quantity | 1 |
| extraShipping | 0 |
| MPN, Part Number, Model, ModelNumber, Model_number, Mpns, PartNumber, Part_number, StrippedMpns | RYM002N05T2CL |
| qtyInStock | 80426 |
| SKU | 4571415 |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierMinQty6 | 1,000 |
| tierMinQty7 | 2,500 |
| tierPrice1 | 0.46000 |
| tierPrice2 | 0.32000 |
| tierPrice3 | 0.29720 |
| tierPrice4 | 0.16130 |
| tierPrice5 | 0.13162 |
| tierPrice6 | 0.09766 |
| tierPrice7 | 0.08216 |
| Product Group | BISS |
| Category | Discrete Semiconductor Products |
| Series, FET Feature | - |
| Package | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25?C | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 0.9V, 4.5V |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Vgs (Max) | ?8V |
| Power Dissipation (Max) | 150mW (Ta) |
| Operating Temperature | 150?C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VMT3 |
| Package / Case | SOT-723 |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 26 pF @ 10 V |
| Base Product Number | RYM002 |
| ASIN | B0731QJ4V7 |
| AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligible | False |
| Asin | B00SRVSAB0 B00SRVSCU4 B00SRVSF74 B0137LO8W4 B0137LQN40 B0731QJ4V7 |
| Bullet_point | ChannelType: N-Ch Drain-sourceOnResistance-Max: 2.2 Ω Noofchannels: 1 RatedPowerDissipation(P): 150 mW GateSourceVoltageMax: 8 V; DrainCurrent-Max(ID): 200 mA; Turn-onTime-Nom(ton): 5 ns; Turn-offTime-Nom(toff): 17 ns; RiseTIme: 8 ns; FallTime: 43 ns; GateSourceThreshold: 0.8 V; TechnologyMosfets: Si; Heig VoltageDraintoSource: 50 V |
| Case, NumberOfItems | 1 10 100 5 50 8000 |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091 16310161 306506011 306831011 306910011 |
| ClassificationId | 306919011 |
| DisplayName | MOSFET |
| Feature | Price For: Pack of 1 Manufacturer : ROHM Semiconductor Product Category : MOSFET RoHS : Id - Continuous Drain Current : 200 mA Vds - Drain-Source Breakdown Voltage : 50 V Rds On - Drain-Source Resistance : 2.2 Ohms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 8 V Vgs th - Gate-Source Threshold Voltage : 0.8 V Maximum Operating Temperature : + 150 C Price For: Pack of 10 Manufacturer : ROHM Semiconductor Product Category : MOSFET RoHS : Id - Continuous Drain Current : 200 mA Vds - Drain-Source Breakdown Voltage : 50 V Rds On - Drain-Source Resistance : 2.2 Ohms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 8 V Vgs th - Gate-Source Threshold Voltage : 0.8 V Maximum Operating Temperature : + 150 C Price For: Pack of 100 Manufacturer : ROHM Semiconductor Product Category : MOSFET RoHS : Id - Continuous Drain Current : 200 mA Vds - Drain-Source Breakdown Voltage : 50 V Rds On - Drain-Source Resistance : 2.2 Ohms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 8 V Vgs th - Gate-Source Threshold Voltage : 0.8 V Maximum Operating Temperature : + 150 C Price For: Pack of 5 Manufacturer : ROHM Semiconductor Product Category : MOSFET RoHS : Id - Continuous Drain Current : 200 mA Vds - Drain-Source Breakdown Voltage : 50 V Rds On - Drain-Source Resistance : 2.2 Ohms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 8 V Vgs th - Gate-Source Threshold Voltage : 0.8 V Maximum Operating Temperature : + 150 C Price For: Pack of 50 Manufacturer : ROHM Semiconductor Product Category : MOSFET RoHS : Id - Continuous Drain Current : 200 mA Vds - Drain-Source Breakdown Voltage : 50 V Rds On - Drain-Source Resistance : 2.2 Ohms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 8 V Vgs th - Gate-Source Threshold Voltage : 0.8 V Maximum Operating Temperature : + 150 C ChannelType: N-Ch |
| Height | 243 56 |
| IsDeadAsin | True |
| ItemClassification | BASE_PRODUCT |
| ItemName, Item_name | ROHM SEMICONDUCTOR RYM002N05T2CL RYM002N05 Series 50 V 2.2 Ohm 200 mA Silicon N-Channel Mosfet - SOT-723 - 8000 item(s) |
| Item_type_keyword | mosfet-transistors |
| Item_weight | 0.07 |
| Keyword | RYM002N05T2CL. |
| Label, Man, Publisher, Studio | ROHM SEMICONDUCTOR ROHM Semiconductor |
| Link | https://m.media-amazon.com/images/I/21J9iNgx6BL._SL75_.jpg https://m.media-amazon.com/images/I/21J9iNgx6BL.jpg |
| Number_of_items | 8000 |
| PackageQuantity | 1 10 100 5 50 |
| ProductGroup | BISS BISS Basic |
| ProductType | ELECTRONIC_COMPONENT |
| ProductTypeName | BISS ELECTRONIC_COMPONENT |
| Product_description | RYM002N05 Series 50 V 2.2 Ohm 200 mA Silicon N-Channel Mosfet - SOT-723 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image ***** |
| Product_site_launch_date | 2017-06-21T18:28:34.876Z |
| Size | 1 pack 10 pack 100 pack 5 pack 50 pack |
| Supplier_declared_dg_hz_regulation | unknown |
| Title | MOSFET .9V DRIVE N-Ch MOSFET (1 piece) MOSFET .9V DRIVE N-Ch MOSFET (10 pieces) MOSFET .9V DRIVE N-Ch MOSFET (100 pieces) MOSFET .9V DRIVE N-Ch MOSFET (5 pieces) MOSFET .9V DRIVE N-Ch MOSFET (50 pieces) ROHM SEMICONDUCTOR RYM002N05T2CL RYM002N05 Series 50 V 2.2 Ohm 200 mA Silicon N-Channel Mosfet - SOT-723 - 8000 item(s) |
| URL | http://ecx.images-amazon.com/images/I/21J9iNgx6BL._SL75_.jpg https://m.media-amazon.com/images/I/21J9iNgx6BL._SL75_.jpg |
| Unit | grams pounds |
| Units | pixels pounds |
| Variant | MAIN |
| WebsiteDisplayGroup | biss_basic_display_on_website |
| WebsiteDisplayGroupName | BISS Basic |
| Weight | 0.0001543235834 |
| Width | 323 75 |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 4571415 | 1 | 80426 | 1 | 1 @ $0.46, 10 @ $0.32, 25 @ $0.30, 100 @ $0.16, 500 @ $0.13, 1000 @ $0.10, 2500 @ $0.08 |
![]() Newark | 78AC6458 | 5 | 13655 | 5 | 1 @ $0.39, 10 @ $0.27, 25 @ $0.23, 50 @ $0.18, 100 @ $0.14, 250 @ $0.13, 500 @ $0.12, 1000 @ $0.09 |
| Hotenda | H1807014 | 1 | 56000 | 1 | 1 @ $0.07 |
| 124-6843 | 60 | 60 | 60 @ $0.31, 300 @ $0.16, 600 @ $0.13, 1500 @ $0.10, 3000 @ $0.08 | ||
| Win Source | RYM002N05T2CL | 1 | 7320 | 1 | |
| Future Electronics | 8067737 | 8000 | 8000 | 8000 @ $0.07, 16000 @ $0.06 | |
| iodParts | RYM002N05T2CL | 1 | 5454 | 1 | |
| Digi-Key | 4571519 | 2000 | 2000 | 1 @ $0.46, 10 @ $0.34, 100 @ $0.19, 500 @ $0.13, 1000 @ $0.10, 2000 @ $0.08 | |
![]() IBS Electronics | RYM002N05T2CL | 1 | 1 | 1 @ $0.00 | |
| Digi-Key | 4004588 | 1 | 1 | 1 @ $0.38, 10 @ $0.29, 100 @ $0.18, 500 @ $0.12, 1000 @ $0.09, 2000 @ $0.09, 8000 @ $0.08, 16000 @ $0.07, 24000 @ $0.07, 56000 @ $0.06 | |
| RS Delivers | 244-0122 | 1 | 1 | ||
| RS Delivers | 244-0123P | 1 | 825 | 1 | 1 @ $0.31 |
| RS Delivers | 244-0123 | 1 | 925 | 1 | 1 @ $0.32 |
| TME | RYM002N05T2CL | 10 | 10 | 10 @ $0.11, 50 @ $0.09, 250 @ $0.08, 2000 @ $0.07, 8000 @ $0.06 | |
| JT25-RYM002N05T2CL | 1 | 25630 | 1 |
Related on Amazon
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MOSFET .9V DRIVE N-Ch MOSFET (1 piece)
Brand: Rohm Semiconductor
Catalog
| Feature | Price For: Pack of 1 Manufacturer : ROHM Semiconductor Product Category : MOSFET RoHS : Id - Continuous Drain Current : 200 mA Vds - Drain-Source Breakdown Voltage : 50 V Rds On - Drain-Source Resistance : 2.2 Ohms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 8 V Vgs th - Gate-Source Threshold Voltage : 0.8 V Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | RYM002N05T2CL |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | ROHM Semiconductor |
MOSFET .9V DRIVE N-Ch MOSFET (10 pieces)
Brand: Rohm Semiconductor
Catalog
| Feature | Price For: Pack of 10 Manufacturer : ROHM Semiconductor Product Category : MOSFET RoHS : Id - Continuous Drain Current : 200 mA Vds - Drain-Source Breakdown Voltage : 50 V Rds On - Drain-Source Resistance : 2.2 Ohms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 8 V Vgs th - Gate-Source Threshold Voltage : 0.8 V Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | RYM002N05T2CL |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | ROHM Semiconductor |
MOSFET .9V DRIVE N-Ch MOSFET (100 pieces)
Brand: Rohm Semiconductor
Catalog
| Feature | Price For: Pack of 100 Manufacturer : ROHM Semiconductor Product Category : MOSFET RoHS : Id - Continuous Drain Current : 200 mA Vds - Drain-Source Breakdown Voltage : 50 V Rds On - Drain-Source Resistance : 2.2 Ohms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 8 V Vgs th - Gate-Source Threshold Voltage : 0.8 V Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | RYM002N05T2CL |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | ROHM Semiconductor |
MOSFET .9V DRIVE N-Ch MOSFET (5 pieces)
Brand: Rohm Semiconductor
Catalog
| Feature | Price For: Pack of 5 Manufacturer : ROHM Semiconductor Product Category : MOSFET RoHS : Id - Continuous Drain Current : 200 mA Vds - Drain-Source Breakdown Voltage : 50 V Rds On - Drain-Source Resistance : 2.2 Ohms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 8 V Vgs th - Gate-Source Threshold Voltage : 0.8 V Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | RYM002N05T2CL |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | ROHM Semiconductor |
MOSFET .9V DRIVE N-Ch MOSFET (50 pieces)
Brand: Rohm Semiconductor
Catalog
| Feature | Price For: Pack of 50 Manufacturer : ROHM Semiconductor Product Category : MOSFET RoHS : Id - Continuous Drain Current : 200 mA Vds - Drain-Source Breakdown Voltage : 50 V Rds On - Drain-Source Resistance : 2.2 Ohms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 8 V Vgs th - Gate-Source Threshold Voltage : 0.8 V Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | RYM002N05T2CL |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | ROHM Semiconductor |
ROHM SEMICONDUCTOR RYM002N05T2CL RYM002N05 Series 50 V 2.2 Ohm 200 mA Silicon N-Channel Mosfet - SOT-723 - 8000 item(s)
Brand: Rohm Semiconductor
RYM002N05 Series 50 V 2.2 Ohm 200 mA Silicon N-Channel Mosfet - SOT-723 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Ch
- Noofchannels: 1
- VoltageDraintoSource: 50 V
- Drain-sourceOnResistance-Max: 2.2 Ω
- RatedPowerDissipation(P): 150 mW GateSourceVoltageMax: 8 V; DrainCurrent-Max(ID): 200 mA; Turn-onTime-Nom(ton): 5 ns; Turn-offTime-Nom(toff): 17 ns; RiseTIme: 8 ns; FallTime: 43 ns; GateSourceThreshold: 0.8 V; TechnologyMosfets: Si; Heig
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | RYM002N05T2CL |
| Part number | RYM002N05T2CL |
| Items per pack | 8000 |
| Label | ROHM SEMICONDUCTOR |
| Manufacturer | ROHM SEMICONDUCTOR |
Catalog
| Feature | ChannelType: N-Ch |
|---|---|
| Category | Industrial & Scientific |
| MPN | RYM002N05T2CL |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ROHM SEMICONDUCTOR |

