Infineon FZ600R12KS4
IGBTs
Gallery
Attributes
| Brand name, Manufacturer name | Infineon |
|---|---|
| Manufacturer | Infineon Infineon Technologies |
| Extra Product Name | Infineon FZ600R12KS4 |
| moq, multiple, tierMinQty1, Case, NumberOfItems | 1 |
| MPN, SKU, Part Number, Manufacturer Part No, PartNumber | FZ600R12KS4 |
| qtyInStock | 4 |
| tierPrice1 | 355.67 |
| Product Group, ProductGroup, ProductTypeName | BISS |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Package/Case | 62 mm |
| Configuration | Single |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 3.2 V |
| Maximum Gate Emitter Voltage | +/- 20 V |
| Brand, Label, Man, Publisher, Studio | Infineon Technologies |
| Power Dissipation | 3900 W |
| Minimum Operating Temperature | - 40 C |
| Mounting Style | Screw |
| Continuous Collector Current at 25 C | 700 A |
| Alternate Part No | 641-FZ600R12KS4 |
| Maximum Operating Temperature | + 125 C |
| Product Category | IGBT Modules |
| Asin | B0137IF2RC |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091 16310161 306506011 306831011 306910011 |
| Feature | Price For: Each Manufacturer : Infineon Product Category : IGBT Modules RoHS : Product : IGBT Silicon Modules Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 3.2 V Continuous Collector Current at 25 C : 700 A Gate-Emitter Leakage Current : 400 nA Power Dissipation : 3900 W Maximum Operating Temperature : + 125 C |
| Title | IGBT Modules N-CH 1.2KV 700A |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| swatee.com | FZ600R12KS4 | 1 | 4 | 1 | 1 @ $355.67 |
 Galco | FZ600R12KS4-EUPC | 10 | 10 | 1 @ $216.59 |
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IGBT Modules N-CH 1.2KV 700A
Brand: Infineon Technologies
Catalog
| Feature | Price For: Each Manufacturer : Infineon Product Category : IGBT Modules RoHS : Product : IGBT Silicon Modules Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 3.2 V Continuous Collector Current at 25 C : 700 A Gate-Emitter Leakage Current : 400 nA Power Dissipation : 3900 W Maximum Operating Temperature : + 125 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | FZ600R12KS4 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |