Diodes Inc - ZXMN3A02X8TA - MOSFET N-Channel 30V 6.7A MSOP8 - RS
MOSFET N-Channel 30V 6.7A MSOP8
Attributes
| Brand name, Manufacturer name | Diodes Inc |
|---|---|
| Manufacturer | Diodes Inc DIODES Diodes Incorporated |
| Category | Uncategorized Products/Uncategorized Products |
| Extra Product Name | Diodes Inc - ZXMN3A02X8TA - MOSFET N-Channel 30V 6.7A MSOP8 - RS |
| moq, multiple, Item_package_quantity | 1 |
| MPN, Part Number, Keyword, Model, ModelNumber, Model_number, PartNumber, Part_number | ZXMN3A02X8TA |
| qtyInStock | 0 |
| snippet | MOSFET N-Channel 30V 6.7A MSOP8 |
| Product Group, ProductGroup, WebsiteDisplayGroupName | BISS |
| ASIN | B0748LPQ8W B07BZS9QN6 |
| AdultProduct, Autographed, Memorabilia, TradeInEligible | False |
| Asin | B0137KLO04 B0137KN6QY B0137KOC30 B0137KQJM2 B0137KROG2 B0748LPQ8W B07BZS9QN6 |
| Brand, Label, Publisher, Studio | DIODES Diodes Incorporated |
| Bullet_point | ChannelType: N-Channel Drain-sourceOnResistance-Max: 0.025 Ω QgGateCharge: 26.8 nC RatedPowerDissipation(P): 1.1 W VoltageDraintoSource: 30 V |
| Case, PackageQuantity | 1 10 100 5 50 |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091 16310161 306506011 306831011 306910011 |
| ClassificationId | 306919011 |
| DisplayName | MOSFET |
| Feature | Price For: Pack of 1 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 6.7 A Vds - Drain-Source Breakdown Voltage : 30 V Rds On - Drain-Source Resistance : 35 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 26.8 nC Price For: Pack of 10 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 6.7 A Vds - Drain-Source Breakdown Voltage : 30 V Rds On - Drain-Source Resistance : 35 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 26.8 nC Price For: Pack of 100 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 6.7 A Vds - Drain-Source Breakdown Voltage : 30 V Rds On - Drain-Source Resistance : 35 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 26.8 nC Price For: Pack of 5 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 6.7 A Vds - Drain-Source Breakdown Voltage : 30 V Rds On - Drain-Source Resistance : 35 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 26.8 nC Price For: Pack of 50 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 6.7 A Vds - Drain-Source Breakdown Voltage : 30 V Rds On - Drain-Source Resistance : 35 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 26.8 nC |
| Height | 243 56 |
| ItemClassification | BASE_PRODUCT |
| ItemName, Item_name | DIODES ZXMN3A02X8TA N-Channel 30 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - MSOP-8 - 10 item(s) DIODES ZXMN3A02X8TA N-Channel 30 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - MSOP-8 - 1000 item(s) |
| Item_type_keyword | mosfet-transistors |
| Item_weight | 0.22 |
| Link | https://m.media-amazon.com/images/I/21P3gyY5yKL._SL75_.jpg https://m.media-amazon.com/images/I/21P3gyY5yKL.jpg |
| Man | Diodes Incorporated |
| NumberOfItems | 1 10 100 1000 5 50 |
| Number_of_items | 10 1000 |
| ProductType, ProductTypeName | BISS ELECTRONIC_COMPONENT |
| Product_description | N-Channel 30 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - MSOP-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image ***** |
| Product_site_launch_date | 2017-07-26T16:31:05.449Z 2018-04-06T17:04:54.048Z |
| Size | 1 pack 10 pack 100 pack 5 pack 50 pack |
| Title | DIODES ZXMN3A02X8TA N-Channel 30 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - MSOP-8 - 10 item(s) DIODES ZXMN3A02X8TA N-Channel 30 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - MSOP-8 - 1000 item(s) MOSFET 30V N Chnl UMOS (1 piece) MOSFET 30V N Chnl UMOS (10 pieces) MOSFET 30V N Chnl UMOS (100 pieces) MOSFET 30V N Chnl UMOS (5 pieces) MOSFET 30V N Chnl UMOS (50 pieces) |
| URL | https://m.media-amazon.com/images/I/21P3gyY5yKL._SL75_.jpg |
| Unit | grams pounds |
| Units | pixels pounds |
| Variant | MAIN |
| WebsiteDisplayGroup | biss_display_on_website |
| Weight | 0.0004850169764 |
| Width | 323 75 |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Allied Electronics | 70438827 | 1 | 1 | ||
![]() Digi-Key | ZXMN3A02X8TR-ND | 1 | 1 | ||
| Digi-Key | 385983 | 1 | 1 | ||
| Hotenda | H1835973 | 1 | 1 | ||
| 708-2595 | 1 | 1 | |||
| Digi-Key | 386048 | 1 | 1 | ||
| Digi-Key | 2348150 | 1 | 1 | ||
![]() Newark | 29AK9170 | 1 | 1000 | 1 | 1 @ $1.54, 10 @ $1.26, 25 @ $1.16, 50 @ $1.07, 100 @ $0.98, 250 @ $0.91, 500 @ $0.83 |
Related on Amazon
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MOSFET 30V N Chnl UMOS (1 piece)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 1 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 6.7 A Vds - Drain-Source Breakdown Voltage : 30 V Rds On - Drain-Source Resistance : 35 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 26.8 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN3A02X8TA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 30V N Chnl UMOS (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 10 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 6.7 A Vds - Drain-Source Breakdown Voltage : 30 V Rds On - Drain-Source Resistance : 35 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 26.8 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN3A02X8TA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 30V N Chnl UMOS (100 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 100 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 6.7 A Vds - Drain-Source Breakdown Voltage : 30 V Rds On - Drain-Source Resistance : 35 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 26.8 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN3A02X8TA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 30V N Chnl UMOS (5 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 5 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 6.7 A Vds - Drain-Source Breakdown Voltage : 30 V Rds On - Drain-Source Resistance : 35 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 26.8 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN3A02X8TA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 30V N Chnl UMOS (50 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 50 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 6.7 A Vds - Drain-Source Breakdown Voltage : 30 V Rds On - Drain-Source Resistance : 35 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 26.8 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN3A02X8TA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
DIODES ZXMN3A02X8TA N-Channel 30 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - MSOP-8 - 1000 item(s)
Brand: DIODES
N-Channel 30 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - MSOP-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 30 V
- Drain-sourceOnResistance-Max: 0.025 Ω
- QgGateCharge: 26.8 nC
- RatedPowerDissipation(P): 1.1 W
Listing
| Product group | BISS |
|---|---|
| Product type | BISS |
| Model | ZXMN3A02X8TA |
| Part number | ZXMN3A02X8TA |
| Items per pack | 1000 |
| Label | DIODES |
| Manufacturer | DIODES |
DIODES ZXMN3A02X8TA N-Channel 30 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - MSOP-8 - 10 item(s)
Brand: DIODES
N-Channel 30 V 0.025 Ohm Surface Mount Enhancement Mode MOSFET - MSOP-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | ZXMN3A02X8TA |
| Part number | ZXMN3A02X8TA |
| Items per pack | 10 |
| Label | DIODES |
| Manufacturer | DIODES |

