IXTR170P10P IXYS | Discrete Semiconductor Products | DigiKey
IXYS IXTR170P10P | Transistor: P-MOSFET; PolarP?; unipolar; -100V; -100A; 312W; 176n
Gallery
Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | IXYS |
|---|---|
| Extra Product Name | IXTR170P10P IXYS | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| MPN | IXTR170P10P |
| qtyInStock | 0 |
| SKU | IXTR170P10P-ND |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierMinQty6 | 1,000 |
| tierMinQty7 | 2,500 |
| tierMinQty8 | 5,000 |
| tierPrice1 | 16.23000 |
| tierPrice2 | 14.91900 |
| tierPrice3 | 14.30040 |
| tierPrice4 | 12.36800 |
| tierPrice5 | 11.20850 |
| tierPrice6 | 10.28090 |
| tierPrice7 | 9.66250 |
| tierPrice8 | 9.27600 |
| Category | Discrete Semiconductor Products |
| Series | Tube |
| Package | Active |
| Part Status | P-Channel |
| FET Type | MOSFET (Metal Oxide) |
| Technology | 108A (Tc) |
| Current - Continuous Drain (Id) @ 25?C | 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 13mOhm @ 85A, 10V |
| Rds On (Max) @ Id, Vgs | 4V @ 1mA |
| Vgs(th) (Max) @ Id | ?20V |
| Vgs (Max) | - |
| FET Feature | 312W (Tc) |
| Power Dissipation (Max) | -55?C ~ 150?C (TJ) |
| Operating Temperature | Through Hole |
| Mounting Type, Supplier Device Package | ISOPLUS247? |
| Package / Case | 100 V |
| Drain to Source Voltage (Vdss) | 240 nC @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 12600 pF @ 25 V |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | IXTR170P10P-ND | 1 | 1 | 1 @ $16.23, 10 @ $14.92, 25 @ $14.30, 100 @ $12.37, 500 @ $11.21, 1000 @ $10.28, 2500 @ $9.66, 5000 @ $9.28 | |
| IXTR170P10P | 1 | 1 | 1 @ $22.30, 3 @ $19.86, 10 @ $17.63, 30 @ $16.57 | ||
| Future Electronics | 2027638 | 30 | 150 | 30 | 30 @ $16.76, 60 @ $14.41 |
 swatee.com | IXTR170P10P | 1 | 22 | 1 | 1 @ $33.75 |
| Digi-Key | 1995420 | 1 | 1 | 1 @ $23.32, 10 @ $21.51, 100 @ $18.37, 500 @ $16.68 |