IXFN120N65X2 IXYS | Discrete Semiconductor Products | DigiKey
IXYS IXFN120N65X2 | Module; single transistor; 650V; 108A; SOT227B; Ugs: ?40V; scre
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Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | IXYS |
|---|---|
| Extra Product Name | IXFN120N65X2 IXYS | Discrete Semiconductor Products | DigiKey |
| atoms, minimum, moq, multiple, tierMinQty1 | 1 |
| MPN | IXFN120N65X2 |
| qtyInStock | 245 |
| SKU | IXFN120N65X2-ND |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierMinQty6 | 1000 |
| tierMinQty7 | 2500 |
| tierMinQty8 | 5000 |
| tierPrice1 | 26.98000 |
| tierPrice2 | 24.88400 |
| tierPrice3 | 23.76600 |
| tierPrice4 | 20.97000 |
| tierPrice5 | 17.89440 |
| tierPrice6 | 17.61480 |
| tierPrice7 | 17.19540 |
| tierPrice8 | 16.77600 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25?C | 108A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 54A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Vgs (Max) | ?30V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
| Package / Case | SOT-227-4, miniBLOC |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15500 pF @ 25 V |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | IXFN120N65X2-ND | 1 | 245 | 1 | 1 @ $26.98, 10 @ $24.88, 25 @ $23.77, 100 @ $20.97, 500 @ $17.89, 1000 @ $17.61, 2500 @ $17.20, 5000 @ $16.78 |
| IXFN120N65X2 | 1 | 10 | 1 | 1 @ $44.50, 3 @ $40.07, 10 @ $35.43 | |
| Digi-Key | 5808196 | 500 | 500 | 1 @ $41.30, 10 @ $38.09, 100 @ $32.53, 500 @ $29.53 |