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Diodes Inc - ZXMN6A09DN8TA - MOSFET Dual N-Channel 60V 5.6A SOIC8 - Allied Electronics & Automation, part of RS Group

MOSFET Dual N-Channel 60V 5.6A SOIC8

Attributes

Brand name, Manufacturer nameDiodes Inc
ManufacturerDiodes Inc DIODES Diodes Incorporated
CategoryElectronic Components/Discrete Semiconductors/Transistors & Modules/MOSFET Transistors
Extra Product NameDiodes Inc - ZXMN6A09DN8TA - MOSFET Dual N-Channel 60V 5.6A SOIC8 - Allied Electronics & Automation, part of RS Group
moq, multiple2
MPN, Part Number, Keyword, Model, ModelNumber, Model_number, PartNumber, Part_numberZXMN6A09DN8TA
qtyInStock0
SKU70438838
snippetMOSFET Dual N-Channel 60V 5.6A SOIC8
ASINB00M1HVKN6 B0731PW3JF B0731RP38T
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00LUSBHE4 B00LUSBIW0 B00LUSBKCI B00M1HVKN6 B00SRW1EZ8 B00SRW1HKA B00SRW1KGQ B0731PW3JF B0731RP38T
Brand, Label, Publisher, StudioDIODES Diodes Incorporated
Bullet_pointChannelType: N-Channel; VoltageDraintoSource: 60 V; Drain-sourceOnResistance-Max: 0.04 ?; ChannelType: N-Channel; VoltageDraintoSource: 60 V; Drain-sourceOnResistance-Max: 0.04 Ω; QgGateCharge: 12.4 nC; RatedPowerDissipation(P): 1.25 W;
Case1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
ClassificationId306506011
DisplayNameIndustrial Electrical
Featureu" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 4.3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 24.2nC @ 5V Input Capacitance (Ciss) @ Vds: 1407pF @ 40V Power - Max: 1.25W Mounting Type: Surface Mount"
Height243 40 56
IsDeadAsinTrue
ItemClassificationBASE_PRODUCT
ItemName, Item_nameDIODES ZXMN6A09DN8TA ZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 - 5 item(s) DIODES ZXMN6A09DN8TA ZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 - 500 item(s)
Item_package_quantity1
Item_type_keywordelectronic-components
Item_weight0.37
Linkhttps://m.media-amazon.com/images/I/21Z7sA1j8wL._SL75_.jpg https://m.media-amazon.com/images/I/21Z7sA1j8wL.jpg
ManDiodes Incorporated
NumberOfItems1 10 100 5 500
Number_of_items5 500
PackageQuantity1 10 100
ProductGroupBISS BISS Basic
ProductTypeELECTRONIC_COMPONENT
ProductTypeNameBISS ELECTRONIC_COMPONENT
Product_descriptionZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-06-21T18:28:11.244Z 2017-06-21T18:28:17.428Z
Size1 Piece 1 pack 10 pack 100 pack
TitleDIODES ZXMN6A09DN8TA ZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 - 5 item(s) DIODES ZXMN6A09DN8TA ZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 - 500 item(s) MOSFET 2N-CH 60V 4.3A 8-SOIC (1 piece) MOSFET 2N-CH 60V 4.3A 8-SOIC (10 pieces) MOSFET 2N-CH 60V 4.3A 8-SOIC (100 pieces) MOSFET Dl 60V N-Chnl UMOS (1 piece) MOSFET Dl 60V N-Chnl UMOS (10 pieces) MOSFET Dl 60V N-Chnl UMOS (5 pieces) MOSFET Dl 60V N-Chnl UMOS (50 pieces)
URLhttp://g-ecx.images-amazon.com/images/G/01/x-site/icons/no-img-sm._CB1275522461_.gif https://m.media-amazon.com/images/I/21Z7sA1j8wL._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625 0.0008157103694
Width323 60 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Allied Electronics7043883822
Digi-Key385989111 @ $2.35, 10 @ $2.11, 100 @ $1.70
Future Electronics3418167500500500 @ $0.68, 1000 @ $0.64, 2000 @ $0.63
Win SourceZXMN6A09DN8TA135001
RS Delivers669-757411
swatee.comZXMN6A09DN8TA18411 @ $3.45
Newark38AH95815005001 @ $0.61, 1000 @ $0.58, 2000 @ $0.56, 3000 @ $0.54, 5000 @ $0.53
AmazonSCB0731PW3JF11
Digi-Key7444591001001 @ $2.35, 10 @ $2.11, 100 @ $1.70
RS Delivers121-9984111 @ $0.35
RS Delivers669-7574P11
Newark29AK9179146011 @ $2.05, 10 @ $1.72, 25 @ $1.61, 50 @ $1.50, 100 @ $1.39, 250 @ $1.34, 500 @ $1.17, 1000 @ $1.03

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MOSFET Dl 60V N-Chnl UMOS (10 pieces)
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MPNZXMN6A09DN8TA
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MOSFET Dl 60V N-Chnl UMOS (1 piece)
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberZXMN6A09DN8TA
LabelDiodes Incorporated
ManufacturerDiodes Incorporated
Catalog
CategoryIndustrial & Scientific
MPNZXMN6A09DN8TA
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET 2N-CH 60V 4.3A 8-SOIC (1 piece)
Brand: Diodes Incorporated
Catalog
Featureu" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 4.3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 24.2nC @ 5V Input Capacitance (Ciss) @ Vds: 1407pF @ 40V Power - Max: 1.25W Mounting Type: Surface Mount"
CategoryIndustrial & Scientific
MPNZXMN6A09DN8TA
Product groupBISS
Product typeBISS
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET 2N-CH 60V 4.3A 8-SOIC (10 pieces)
Brand: Diodes Incorporated
Catalog
Featureu" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 4.3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 24.2nC @ 5V Input Capacitance (Ciss) @ Vds: 1407pF @ 40V Power - Max: 1.25W Mounting Type: Surface Mount"
CategoryIndustrial & Scientific
MPNZXMN6A09DN8TA
Product groupBISS
Product typeBISS
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET 2N-CH 60V 4.3A 8-SOIC (100 pieces)
Brand: Diodes Incorporated
Catalog
Featureu" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 4.3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 24.2nC @ 5V Input Capacitance (Ciss) @ Vds: 1407pF @ 40V Power - Max: 1.25W Mounting Type: Surface Mount"
CategoryIndustrial & Scientific
MPNZXMN6A09DN8TA
Product groupBISS
Product typeBISS
ManufacturerDiodes Incorporated
View on Amazon (paid link)
DIODES ZXMN6A09DN8TA ZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 - 500 item(s)
Brand: DIODES
ZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Channel; VoltageDraintoSource: 60 V; Drain-sourceOnResistance-Max: 0.04 Ω;
  • QgGateCharge: 12.4 nC; RatedPowerDissipation(P): 1.25 W;
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelZXMN6A09DN8TA
Part numberZXMN6A09DN8TA
Items per pack500
LabelDIODES
ManufacturerDIODES
View on Amazon (paid link)
DIODES ZXMN6A09DN8TA ZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 - 5 item(s)
Brand: DIODES
ZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Channel; VoltageDraintoSource: 60 V; Drain-sourceOnResistance-Max: 0.04 ?;
  • QgGateCharge: 12.4 nC; RatedPowerDissipation(P): 1.25 W;
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelZXMN6A09DN8TA
Part numberZXMN6A09DN8TA
Items per pack5
LabelDIODES
ManufacturerDIODES
View on Amazon (paid link)