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G3S06508J Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey

Diode Silicon Carbide Schottky 650 V 23A (DC) Through Hole TO-220ISO

Global Power Technology-GPT . G3S06508J

Attributes

Brand name, Manufacturer name, Manufacturer, MfrGlobal Power Technology-GPT
Extra Product NameG3S06508J Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
extraShipping, qtyInStock0
MPNG3S06508J
packaging, PackageCut Tape (CT)
SKU14322196
snippetDiode Silicon Carbide Schottky 650 V 23A (DC) Through Hole TO-220ISO
tierMinQty210
tierMinQty330
tierMinQty490
tierMinQty5300
tierMinQty6750
tierPrice16.70000
tierPrice26.02100
tierPrice35.69267
tierPrice44.93356
tierPrice54.68050
tierPrice64.19980
CategoryDiscrete Semiconductor Products
Series-
Product StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)23A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 ?A @ 650 V
Capacitance @ Vr, F550pF @ 0V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2 Isolated Tab
Supplier Device PackageTO-220ISO
Operating Temperature - Junction-55?C ~ 175?C

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key14322196111 @ $6.70, 10 @ $6.02, 30 @ $5.69, 90 @ $4.93, 300 @ $4.68, 750 @ $4.20