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ICE11N65 IceMOS Technology | Discrete Semiconductor Products | DigiKey Marketplace

N-Channel 650 V 11A (Tc) 96W (Tc) Through Hole TO-220

IceMOS Technology . ICE11N65

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Attributes

Brand name, Manufacturer name, Manufacturer, MfrIceMOS Technology
CategoryL1, CategoryDiscrete Semiconductor Products
CategoryL2Transistors
CategoryL3FETs, MOSFETs
Extra Product NameICE11N65 IceMOS Technology | Discrete Semiconductor Products | DigiKey Marketplace
atoms, moq, multiple1
extraShipping12.0
MPN, Manufacturer Product NumberICE11N65
qtyInStock0
SKU20412687
snippet, Detailed DescriptionN-Channel 650 V 11A (Tc) 96W (Tc) Through Hole TO-220
Digi-Key Part Number5133-ICE11N65-ND
DescriptionSuperjunction MOSFET
Series, FET Feature-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25?C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id3.9V @ 250?A
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Vgs (Max)?20V
Input Capacitance (Ciss) (Max) @ Vds1277 pF @ 25 V
Power Dissipation (Max)96W (Tc)
Operating Temperature-55?C ~ 150?C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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