DIODES ZETEX . ZXM62N02E6TA
DIODES INCORPORATED ZXM62N02E6TA | Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.1W; SOT2
Gallery
Attributes
| Brand name, Manufacturer name | DIODES ZETEX |
|---|---|
| Manufacturer | DIODES ZETEX Diodes Incorporated |
| Part Number, MPN, PartNumber | ZXM62N02E6TA |
| Product Group, ProductGroup, ProductTypeName | BISS |
| Asin | B0137LFUYY B0137LI672 B0137LIX3O B0137LL8QS B0137LM6QO |
| Brand, Label, Man, Publisher, Studio | Diodes Incorporated |
| Case, NumberOfItems, PackageQuantity | 1 10 100 5 50 |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091 16310161 306506011 306831011 306910011 |
| Feature | Price For: Pack of 1 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 3.2 A Vds - Drain-Source Breakdown Voltage : 20 V Rds On - Drain-Source Resistance : 125 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 12 V Vgs th - Gate-Source Threshold Voltage : 0.7 V Qg - Gate Charge : 6.3 nC Price For: Pack of 10 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 3.2 A Vds - Drain-Source Breakdown Voltage : 20 V Rds On - Drain-Source Resistance : 125 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 12 V Vgs th - Gate-Source Threshold Voltage : 0.7 V Qg - Gate Charge : 6.3 nC Price For: Pack of 100 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 3.2 A Vds - Drain-Source Breakdown Voltage : 20 V Rds On - Drain-Source Resistance : 125 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 12 V Vgs th - Gate-Source Threshold Voltage : 0.7 V Qg - Gate Charge : 6.3 nC Price For: Pack of 5 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 3.2 A Vds - Drain-Source Breakdown Voltage : 20 V Rds On - Drain-Source Resistance : 125 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 12 V Vgs th - Gate-Source Threshold Voltage : 0.7 V Qg - Gate Charge : 6.3 nC Price For: Pack of 50 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 3.2 A Vds - Drain-Source Breakdown Voltage : 20 V Rds On - Drain-Source Resistance : 125 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 12 V Vgs th - Gate-Source Threshold Voltage : 0.7 V Qg - Gate Charge : 6.3 nC |
| Size | 1 pack 10 pack 100 pack 5 pack 50 pack |
| Title | MOSFET 20V N-Chnl HDMOS (1 piece) MOSFET 20V N-Chnl HDMOS (10 pieces) MOSFET 20V N-Chnl HDMOS (100 pieces) MOSFET 20V N-Chnl HDMOS (5 pieces) MOSFET 20V N-Chnl HDMOS (50 pieces) |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| ZXM62N02E6TA | 1 | 26571 | 1 | 1 @ $0.29, 3000 @ $0.28 | |
| ZXM62N02E6TA | 1 | 1 | |||
![]() swatee.com | ZXM62N02E6TA | 1 | 1507 | 1 | 1 @ $1.81 |
Related on Amazon
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MOSFET 20V N-Chnl HDMOS (1 piece)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 1 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 3.2 A Vds - Drain-Source Breakdown Voltage : 20 V Rds On - Drain-Source Resistance : 125 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 12 V Vgs th - Gate-Source Threshold Voltage : 0.7 V Qg - Gate Charge : 6.3 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXM62N02E6TA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 20V N-Chnl HDMOS (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 10 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 3.2 A Vds - Drain-Source Breakdown Voltage : 20 V Rds On - Drain-Source Resistance : 125 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 12 V Vgs th - Gate-Source Threshold Voltage : 0.7 V Qg - Gate Charge : 6.3 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXM62N02E6TA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 20V N-Chnl HDMOS (100 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 100 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 3.2 A Vds - Drain-Source Breakdown Voltage : 20 V Rds On - Drain-Source Resistance : 125 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 12 V Vgs th - Gate-Source Threshold Voltage : 0.7 V Qg - Gate Charge : 6.3 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXM62N02E6TA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 20V N-Chnl HDMOS (5 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 5 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 3.2 A Vds - Drain-Source Breakdown Voltage : 20 V Rds On - Drain-Source Resistance : 125 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 12 V Vgs th - Gate-Source Threshold Voltage : 0.7 V Qg - Gate Charge : 6.3 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXM62N02E6TA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 20V N-Chnl HDMOS (50 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 50 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Brand : Diodes Incorporated Id - Continuous Drain Current : 3.2 A Vds - Drain-Source Breakdown Voltage : 20 V Rds On - Drain-Source Resistance : 125 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 12 V Vgs th - Gate-Source Threshold Voltage : 0.7 V Qg - Gate Charge : 6.3 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXM62N02E6TA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
