# NVMFS5C612NLAFT1G ON RF Integrated Circuits - Jotrin Electronics

**Manufacturer:** ON Semiconductor, LLC  
**MPN:** `NVMFS5C612NLAFT1G`

## Specifications

| Attribute | Value |
| --- | --- |
| Brand name | ON Semiconductor, LLC |
| Manufacturer name | ON Semiconductor, LLC |
| Manufacturer | ON Semiconductor, LLC |
| Extra Product Name | NVMFS5C612NLAFT1G ON RF Integrated Circuits - Jotrin Electronics |
| keywords | NVMFS5C612NLAFT1G,ON,CLIP DFN 6,RF Field Effect Transistor,NVMFS5C612NLAFT1G Datasheet PDF |
| moq | 1 |
| MPN | NVMFS5C612NLAFT1G |
| multiple | 1 |
| qtyInStock | 1663 |
| SKU | JT24-NVMFS5C612NLAFT1G |
| snippet | Buy NVMFS5C612NLAFT1G ON , Learn more about NVMFS5C612NLAFT1G NFET SO8FL 60V, View the manufacturer, and stock, and datasheet pdf for the NVMFS5C612NLAFT1G at Jotrin Electronics. |
| Package/Case | CLIP DFN 6 |
| Product Categories | RF Field Effect Transistor |
| RoHs Status | AEC Qualified PPAP Capable Pb-free Halide free |
| In-stock | 1663 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.36mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250??A |
| Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
| Vgs (Max) | ??20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6660pF @ 25V |
| Power Dissipation (Max) | 3.8W (Ta), 167W (Tc) |
| Operating Temperature | -55??C ~ 175??C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |

## Distributor availability

| Distributor | SKU | Price (USD) | Qty | Stock | MOQ |
| --- | --- | --- | --- | --- | --- |
| jotrin.com | JT24-NVMFS5C612NLAFT1G |  |  | 1663 | 1 |

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