U2T355 Semiconductor - CASE: Standard MAKE: Generic
U2T355 Semiconductor - CASE: Standard MAKE: Generic
Attributes
| Brand name, Manufacturer name, Manufacturer | Generic |
|---|---|
| keywords | Buy U2T355, U2T355, U2T355 Semiconductor |
| moq, multiple | 1 |
| MPN, SKU | U2T355 |
| originalCurrency | {'currency': 'GBP'} |
| qtyInStock | 0 |
| snippet | U2T355 Semiconductor - CASE: Standard MAKE: Generic |
| Case | TO33 |
| Type | Transistor Silicon NPN |
| Vbr CEO | 120 |
| Max PD (W) | 4.0 |
| Min hFE | 1.0k |
| Ic Max (A) | 5.0 |
| Mat | Silicon Logic |
| Polarity | NPN |
| R(sat) (?) | 1.2 |
| @VCE (test) | 2.0 |
| Pinout Equivalence Number | 4-99 |
| Surface Mounted Yes/No | NO |
| Maximum Collector Power Dissipation (Pc) | 1 W |
| Maximum Collector-Base Voltage |Vcb| | 120 V |
| Maximum Emitter-Base Voltage |Veb| | 12 V |
| Maximum Collector Current |Ic max| | 5 A |
| Max Operating Junction Temperature (Tj) | 200 ?C |
| Collector Capacitance (Cc) | 60 pF |
| Transition Frequency (ft): | 50 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 2 |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | U2T355 | 1 | 1 |