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G3S12003C Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey

Diode Silicon Carbide Schottky 1200 V 12A (DC) Surface Mount TO-252

Global Power Technology-GPT . G3S12003C

Attributes

Brand name, Manufacturer name, Manufacturer, MfrGlobal Power Technology-GPT
Extra Product NameG3S12003C Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
extraShipping, qtyInStock0
MPNG3S12003C
packaging, PackageCut Tape (CT)
SKU14322333
snippetDiode Silicon Carbide Schottky 1200 V 12A (DC) Surface Mount TO-252
tierMinQty210
tierMinQty330
tierMinQty490
tierMinQty5300
tierMinQty6750
tierPrice14.87000
tierPrice24.37200
tierPrice34.13333
tierPrice43.58211
tierPrice53.39847
tierPrice63.04941
CategoryDiscrete Semiconductor Products
Series-
Product StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)12A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 3 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr100 ?A @ 1200 V
Capacitance @ Vr, F260pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252
Operating Temperature - Junction-55?C ~ 175?C

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Digi-Key14322333111 @ $4.87, 10 @ $4.37, 30 @ $4.13, 90 @ $3.58, 300 @ $3.40, 750 @ $3.05