G12P10TE Goford Semiconductor | Discrete Semiconductor Products | DigiKey
P-Channel 100 V 12A (Tc) 40W (Tc) Through Hole TO-220
Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | Goford Semiconductor |
|---|---|
| Extra Product Name | G12P10TE Goford Semiconductor | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| extendedLead | 8 Weeks |
| extraShipping | 0 |
| MPN | G12P10TE |
| packaging, Package | Tube |
| qtyInStock | 85 |
| SKU | 18088001 |
| snippet | P-Channel 100 V 12A (Tc) 40W (Tc) Through Hole TO-220 |
| tierMinQty2 | 10 |
| tierMinQty3 | 100 |
| tierMinQty4 | 500 |
| tierMinQty5 | 1,000 |
| tierMinQty6 | 2,000 |
| tierMinQty7 | 5,000 |
| tierMinQty8 | 10,000 |
| tierPrice1 | 0.79000 |
| tierPrice2 | 0.69300 |
| tierPrice3 | 0.53130 |
| tierPrice4 | 0.42000 |
| tierPrice5 | 0.33600 |
| tierPrice6 | 0.30450 |
| tierPrice7 | 0.28350 |
| tierPrice8 | 0.27300 |
| Category | Discrete Semiconductor Products |
| Series, FET Feature | - |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25?C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250?A |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ?20V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
| Power Dissipation (Max) | 40W (Tc) |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 18088001 | 1 | 85 | 1 | 1 @ $0.79, 10 @ $0.69, 100 @ $0.53, 500 @ $0.42, 1000 @ $0.34, 2000 @ $0.30, 5000 @ $0.28, 10000 @ $0.27 |