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ZXMN20B28KTC Diodes Incorporated | Discrete Semiconductor Products | DigiKey

N-Channel 200 V 1.5A (Ta) 2.2W (Ta) Surface Mount TO-252-3

Diodes Incorporated . ZXMN20B28KTC

Attributes

Brand name, Manufacturer name, Manufacturer, Mfr, Brand, Label, Man, Publisher, StudioDiodes Incorporated
Extra Product NameZXMN20B28KTC Diodes Incorporated | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
extraShipping, qtyInStock0
MPN, Part Number, PartNumberZXMN20B28KTC
SKU2183371
snippetN-Channel 200 V 1.5A (Ta) 2.2W (Ta) Surface Mount TO-252-3
tierMinQty210
tierMinQty3100
tierMinQty4500
tierMinQty51,000
tierPrice10.9429999999999998
tierPrice20.8325999999999999
tierPrice30.6384799999999999
tierPrice40.5047349999999999
tierPrice50.403788
Product Group, ProductGroupBISS
CategoryDiscrete Semiconductor Products
Series, FET Feature-
PackageTape & Reel (TR)
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25?C1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs750mOhm @ 2.75A, 10V
Vgs(th) (Max) @ Id2.5V @ 250?A
Gate Charge (Qg) (Max) @ Vgs8.1 nC @ 5 V
Vgs (Max)?20V
Input Capacitance (Ciss) (Max) @ Vds358 pF @ 25 V
Power Dissipation (Max)2.2W (Ta)
Operating Temperature-55?C ~ 150?C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Base Product NumberZXMN20
AsinB00LUS47PK B00LUS493K B00LUS4AJS B00LUS4BY2 B00LUS4DFO B00LUS4ERG B00M1HQA86
Case, PackageQuantity1 10 100 1000 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 522-ZXMN20B28KTC X1 MS 522-ZXMN20B28KTC X10 MS 522-ZXMN20B28KTC X100 MS 522-ZXMN20B28KTC X5 MS 522-ZXMN20B28KTC X50 MS 522-ZXMN20B28KTC X500
FeaturePack of: 1000 Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Continuous Drain Current: 2.3 A Drain-Source On Resistance: 750 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 57.1 ns Forward Transconductance - Min: 6.13 S Gate Charge Qg: 8.1 nC
IsDeadAsinTrue
NumberOfItems1000
ProductTypeNameELECTRONIC_COMPONENT
Size1 10 Piece 100 Piece 1000 pack 5 Piece 50 Piece 500
TitleMOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (1 piece) MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (10 pieces) MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (100 pieces) MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (1000 pieces) MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (5 pieces) MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (50 pieces) MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key2183371111 @ $0.94, 10 @ $0.83, 100 @ $0.64, 500 @ $0.50, 1000 @ $0.40
HotendaH18119081726811 @ $0.74, 10 @ $0.65, 100 @ $0.49, 500 @ $0.39
Win SourceZXMN20B28KTC123101
RS Delivers751-535011
Future Electronics4016780250025002500 @ $0.24
Digi-Key2183369169711 @ $0.90, 10 @ $0.79, 25 @ $0.75, 100 @ $0.61, 500 @ $0.48, 1000 @ $0.38
Digi-Key2183374100010001 @ $0.94, 10 @ $0.83, 100 @ $0.64, 500 @ $0.50, 1000 @ $0.40
Newark29AK9167591251 @ $0.84, 10 @ $0.73, 25 @ $0.67, 50 @ $0.59, 100 @ $0.53, 250 @ $0.49, 500 @ $0.45
Newark86AK6608250025002500 @ $0.34, 5000 @ $0.34, 10000 @ $0.33, 15000 @ $0.32, 25000 @ $0.31
jotrin.comJT25-ZXMN20B28KTC1250001

Related on Amazon

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MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (10 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Continuous Drain Current: 2.3 A Drain-Source On Resistance: 750 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 57.1 ns Forward Transconductance - Min: 6.13 S Gate Charge Qg: 8.1 nC
CategoryIndustrial & Scientific
MPNZXMN20B28KTC
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (100 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Continuous Drain Current: 2.3 A Drain-Source On Resistance: 750 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 57.1 ns Forward Transconductance - Min: 6.13 S Gate Charge Qg: 8.1 nC
CategoryIndustrial & Scientific
MPNZXMN20B28KTC
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (1000 pieces)
Catalog
FeaturePack of: 1000
CategoryIndustrial & Scientific
MPNZXMN20B28KTC
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (5 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Continuous Drain Current: 2.3 A Drain-Source On Resistance: 750 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 57.1 ns Forward Transconductance - Min: 6.13 S Gate Charge Qg: 8.1 nC
CategoryIndustrial & Scientific
MPNZXMN20B28KTC
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (50 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Continuous Drain Current: 2.3 A Drain-Source On Resistance: 750 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 57.1 ns Forward Transconductance - Min: 6.13 S Gate Charge Qg: 8.1 nC
CategoryIndustrial & Scientific
MPNZXMN20B28KTC
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (500 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Continuous Drain Current: 2.3 A Drain-Source On Resistance: 750 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 57.1 ns Forward Transconductance - Min: 6.13 S Gate Charge Qg: 8.1 nC
CategoryIndustrial & Scientific
MPNZXMN20B28KTC
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL (1 piece)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Continuous Drain Current: 2.3 A Drain-Source On Resistance: 750 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 57.1 ns Forward Transconductance - Min: 6.13 S Gate Charge Qg: 8.1 nC
CategoryIndustrial & Scientific
MPNZXMN20B28KTC
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)