As an Amazon Associate, we earn from qualifying purchases.

IXYS Corporation . IXFH12N50F

Buy IXFH12N50F IXYS , Learn more about IXFH12N50F N-Channel Enhancement Mode HiPerFET Power MOSFET (maximum drain-source breakdown voltage of 500V, 0.4? on-resistance N-channel enhancement mode HiPerFET power MOSFET) ,MOSFET, View the manufacturer, and stock, and datasheet pdf for the IXFH12N50F at Jotrin Electronics.

Gallery

Attributes

Brand name, Manufacturer name, ManufacturerIXYS Corporation
moq, multiple1
MPN, SKU, Manufacturer Part NumberIXFH12N50F
qtyInStock0
Current - Continuous Drain (Id) @ 25?C12A (Tc)
Drain to Source Voltage (Vdss)500V
Drive Voltage (Max Rds On, Min Rds On)10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1870pF @ 25V
Lead Free Status / RoHS StatusRoHS Compliant
Manufacturer Standard Lead Time14 Weeks
Mounting TypeThrough Hole
Operating Temperature-55
Package / CaseTO-247-3
PackagingTube
Power Dissipation (Max)180W (Tc)
Rds On (Max) @ Id, Vgs400 mOhm @ 6A, 10V
SeriesHiPerRF
Standard Package30
Supplier Device PackageTO-247 (IXFH)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5.5V @ 2.5mA

Distributor offers

SellerSKUMOQIn stockMultiplePrices
iodPartsIXFH12N50F11
jotrin.comJT25-IXFH12N50F12081