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G3S12050P Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey

Diode Silicon Carbide Schottky 1200 V 117A (DC) Through Hole TO-247AC

Attributes

Brand name, Manufacturer name, Manufacturer, MfrGlobal Power Technology-GPT
Extra Product NameG3S12050P Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
extraShipping, qtyInStock0
MPNG3S12050P
packaging, PackageCut Tape (CT)
SKU14322242
snippetDiode Silicon Carbide Schottky 1200 V 117A (DC) Through Hole TO-247AC
tierMinQty210
tierMinQty330
tierMinQty490
tierMinQty5300
tierPrice147.06000
tierPrice243.90400
tierPrice342.06400
tierPrice438.12044
tierPrice536.80600
CategoryDiscrete Semiconductor Products
Series-
Product StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)117A (DC)
Voltage - Forward (Vf) (Max) @ If1.8 V @ 150 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr100 ?A @ 1200 V
Capacitance @ Vr, F7500pF @ 0V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-247-2
Supplier Device PackageTO-247AC
Operating Temperature - Junction-55?C ~ 175?C

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