FZ900R12KE4-Infineon-IGBTs
IGBTs
Gallery
Attributes
| Brand name, Manufacturer name | Infineon |
|---|---|
| Manufacturer | Infineon Infineon Technologies Infineon Technologies Industrial Power and Controls Americas |
| CategoryL1 | Semiconductors |
| CategoryL2 | Transistors |
| CategoryL3, snippet | IGBTs |
| DimensionUnit | mm |
| Extra Product Name | FZ900R12KE4-Infineon-IGBTs |
| Weight | 0.7496 |
| WeightUnit | lbs |
| Weight_Attrib | Net Weight |
| atoms, tierMinQty1, Case, NumberOfItems | 1 |
| height | 36.5 |
| height_Attrib | Height (mm) |
| keywords | IGBTs-Transistors-IGBT |
| moq, multiple, qtyInStock | 10 |
| MPN, Part Number, Manufacturer Part Number, Item Number, Mpns, PartNumber, Part_number, StrippedMpns | FZ900R12KE4 |
| SKU | FZ900R12KE4-EUPC |
| tierPrice1 | 227.94 |
| Product Group, ProductType, ProductTypeName | BISS |
| Height (mm) | 36.5 mm |
| Product Series | 62mm |
| Family Series | Infineon Transistors, 62mm Series |
| Vces | 1,200 VDC |
| Ic | 900 A |
| vges+/- | 20 V |
| Ices Max | 5 mA |
| Iges Max | 0.4 ?A |
| Vge(th) Min/Max | 5.2-6.4 V |
| Vce(sat) Max | 2.1 V |
| Circuit Type | Single IGBT |
| Approvals | UL |
| Comments | Low Saturation and Fast Trench IGBT |
| Net Weight, Gross Weight | 0.7496 lbs |
| ASIN, Asin | B0137IPOMU |
| AdultProduct, Autographed, Memorabilia, TradeInEligible | False |
| Brand, Man | Infineon Technologies |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091 16310161 306506011 306831011 306910011 |
| ClassificationId | 306916011 |
| DisplayName | IGBT |
| Feature | Price For: Each Manufacturer : Infineon Product Category : IGBT Modules RoHS : Brand : Infineon Technologies Product : IGBT Silicon Modules Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.1 V Continuous Collector Current at 25 C : 900 A Gate-Emitter Leakage Current : 400 nA Power Dissipation : 4300 W Maximum Operating Temperature : + 150 C |
| Height, Width | 500 75 |
| IsBrandQuery | True |
| ItemClassification | BASE_PRODUCT |
| ItemName, Item_name | Infineon Technologies Industrial Power and Controls Americas IGBT MODULE 1200V 900A FZ900R12KE4 Transistors - IGBTs - Modules |
| Item_type_keyword | igbt-transistors |
| Keyword | IRF7425TRPBFDKR-ND |
| Label, Publisher, Studio | Infineon Technologies Infineon Technologies Industrial Power and Controls Americas |
| Link | https://m.media-amazon.com/images/I/41aQMTWYUFL._SL75_.jpg https://m.media-amazon.com/images/I/41aQMTWYUFL.jpg |
| ProductGroup | BISS BISS Basic |
| Product_site_launch_date | 2016-10-27T04:51:52.083Z |
| Sku | INFINEON TECHNOLOGIES CY2VC511ZXC INFINEON TECHNOLOGIES INDUSTRIAL POWER AND CONTROLS AMERICAS FF150R12RT4 INFINEON TECHNOLOGIES INDUSTRIAL POWER AND CONTROLS AMERICAS FF450R12KE4 INFINEON TECHNOLOGIES INDUSTRIAL POWER AND CONTROLS AMERICAS FS100R12KE3 INFINEON TECHNOLOGIES INDUSTRIAL POWER AND CONTROLS AMERICAS FS150R12KE3 INFINEON TECHNOLOGIES INDUSTRIAL POWER AND CONTROLS AMERICAS FS450R12KE3 |
| Title | IGBT Modules 1200V 900A Infineon Technologies Industrial Power and Controls Americas IGBT MODULE 1200V 900A FZ900R12KE4 Transistors - IGBTs - Modules |
| URL | http://ecx.images-amazon.com/images/I/41aQMTWYUFL._SL75_.jpg https://m.media-amazon.com/images/I/41aQMTWYUFL._SL75_.jpg |
| Units | pixels |
| Variant | MAIN |
| WebsiteDisplayGroup | biss_basic_display_on_website |
| WebsiteDisplayGroupName | BISS Basic |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Galco | FZ900R12KE4-EUPC | 10 | 10 | 10 | 1 @ $227.94 |
Related on Amazon
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Infineon Technologies Industrial Power and Controls Americas IGBT MODULE 1200V 900A FZ900R12KE4 Transistors - IGBTs - Modules
Brand: Infineon Technologies
Listing
| Product group | BISS Basic |
|---|---|
| Product type | BISS |
| Part number | FZ900R12KE4 |
| Label | Infineon Technologies Industrial Power and Controls Americas |
| Manufacturer | Infineon Technologies Industrial Power and Controls Americas |
Catalog
| Feature | Price For: Each Manufacturer : Infineon Product Category : IGBT Modules RoHS : Brand : Infineon Technologies Product : IGBT Silicon Modules Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.1 V Continuous Collector Current at 25 C : 900 A Gate-Emitter Leakage Current : 400 nA Power Dissipation : 4300 W Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | FZ900R12KE4 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |