IDB676 Semiconductor - CASE: Standard MAKE: Generic
IDB676 Semiconductor - CASE: Standard MAKE: Generic
Attributes
| Brand name, Manufacturer name, Manufacturer | Generic |
|---|---|
| keywords | Buy IDB676, IDB676, IDB676 Semiconductor |
| moq, multiple | 1 |
| MPN, SKU | IDB676 |
| originalCurrency | {'currency': 'GBP'} |
| qtyInStock | 0 |
| snippet | IDB676 Semiconductor - CASE: Standard MAKE: Generic |
| Case | TO220 |
| Type | Transistor Silicon PNP |
| Vbr CEO | 80 |
| Max PD (W) | 30 |
| Min hFE | 2.0k |
| Ic Max (A) | 4.0 |
| @Ic (test) (A) | 1.0 |
| Polarity | PNP |
| Tr Max (s) | 400n |
| Pinout Equivalence Number | 3-15 |
| Surface Mounted Yes/No | NO |
| Maximum Collector Power Dissipation (Pc) | 30 W |
| Maximum Collector-Emitter Voltage |Vce| | 80 V |
| Maximum Collector Current |Ic max| | 4 A |
| Max Operating Junction Temperature (Tj) | 140 ?C |
| Forward Current Transfer Ratio (hFE), MIN | 2000 |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | IDB676 | 1 | 1 |