IXTH1N200P3 IXYS | Discrete Semiconductor Products | DigiKey
IXYS IXTH1N200P3 | Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3u
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Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | IXYS |
|---|---|
| Extra Product Name | IXTH1N200P3 IXYS | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| MPN | IXTH1N200P3 |
| qtyInStock | 111 |
| SKU | IXTH1N200P3-ND |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierMinQty6 | 1,000 |
| tierMinQty7 | 2,500 |
| tierMinQty8 | 5,000 |
| tierMinQty9 | 9,000 |
| tierPrice1 | 6.02000 |
| tierPrice2 | 5.44000 |
| tierPrice3 | 5.18640 |
| tierPrice4 | 4.30100 |
| tierPrice5 | 3.79500 |
| tierPrice6 | 3.41550 |
| tierPrice7 | 3.28900 |
| tierPrice8 | 3.11190 |
| tierPrice9 | 3.03600 |
| Category | Discrete Semiconductor Products |
| Series, FET Feature | - |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25?C | 1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 40Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250?A |
| Vgs (Max) | ?20V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) |
| Package / Case | TO-247-3 |
| Drain to Source Voltage (Vdss) | 2000 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 646 pF @ 25 V |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | IXTH1N200P3-ND | 1 | 111 | 1 | 1 @ $6.02, 10 @ $5.44, 25 @ $5.19, 100 @ $4.30, 500 @ $3.79, 1000 @ $3.42, 2500 @ $3.29, 5000 @ $3.11, 9000 @ $3.04 |
| IXTH1N200P3 | 1 | 1 | 1 @ $9.99, 3 @ $8.98, 10 @ $7.93, 30 @ $7.13 | ||
| Digi-Key | 5144351 | 1000 | 10 | 1000 | 1 @ $9.22, 10 @ $8.33, 100 @ $6.89, 500 @ $6.00, 1000 @ $5.28 |