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IXYS IXGN100N170 | Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B

IXYS IXGN100N170 | Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227

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Attributes

Brand name, Manufacturer name, ManufacturerIXYS
CategoryL1Semiconductors
CategoryL2Discrete semiconductors modules
CategoryL3IGBT modules
CategoryL4Catalogue
Extra Product NameIXYS IXGN100N170 | Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
atoms, moq, multiple, tierMinQty11
jsonUrlData63cee6a0e7198155be8aad4c891ad6a4.
jsonUrlData224b542d455c5a9245d32
keywordsIXYS, IXGN100N170
MPN, SKUIXGN100N170
qtyInStock13
snippetIXYS IXGN100N170 | Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227
tierMinQty23
tierMinQty310
tierPrice175.36
tierPrice267.86
tierPrice359.95
Type of moduleIGBT
Semiconductor structuresingle transistor
Max off-state voltage1.7kV
Collector current95A
CaseSOT227B
Electrical mounting, Mechanical mountingscrew
Gate-emitter voltage?20V
Pulsed collector current600A
Power dissipation735W
TechnologyNPT
Features of semiconductor deviceshigh voltage

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