VISHAY . SIR416DP-T1-GE3

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 40 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2.5 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 50 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 3.8@10V Typical Gate Charge @ Vgs (nC): 59@10V|28.2@4.5V Typical Gate Charge @ 10V (nC): 59 Typical Gate to Drain Charge (nC): 9 Typical Gate to Source Charge (nC): 7.7 Typical Reverse Recovery Charge (nC): 26 Typical Input Capacitance @ Vds (pF): 3350@20V Typical Reverse Transfer Capacitance @ Vds (pF): 197@20V Minimum Gate Threshold Voltage (V): 1.2 Typical Output Capacitance (pF): 490 Maximum Power Dissipation (mW): 5200 Typical Fall Time (ns): 40 Typical Rise Time (ns): 85 Typical Turn-Off Delay Time (ns): 42 Typical Turn-On Delay Time (ns): 28 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 5.2 Maximum Pulsed Drain Current @ TC=25°C (A): 70 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 65 Typical Diode Forward Voltage (V): 0.7 Typical Gate Plateau Voltage (V): 2.4 Typical Reverse Recovery Time (ns): 31 Maximum Diode Forward Voltage (V): 1.1 Minimum Gate Resistance (Ohm): 0.2 Maximum Gate Resistance (Ohm): 2.2 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 27.5 Supplier Package: PowerPAK SO EP Pin Count: 8 Standard Package Name: SO Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead