Product_description: ['EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Material: Si Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±10 Maximum Gate Threshold Voltage (V): 2 Maximum Continuous Drain Current (A): 10 Maximum Drain Source Resistance (mOhm): 200@5V Typical Gate Charge @ Vgs (nC): 8.4(Max)@5V Typical Gate to Drain Charge (nC): 6(Max) Typical Gate to Source Charge (nC): 3.5(Max) Typical Reverse Recovery Charge (nC): 340 Typical Input Capacitance @ Vds (pF): 400@25V Typical Output Capacitance (pF): 170 Maximum Power Dissipation (mW): 3700 Typical Fall Time (ns): 26 Typical Rise Time (ns): 110 Typical Turn-Off Delay Time (ns): 17 Typical Turn-On Delay Time (ns): 9.3 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab']
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