IRF510STRRPBF-Vishay-MOSFETs

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Operating Junction Temperature (°C): -55 to 175 Maximum Continuous Drain Current (A): 5.6 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 540@10V Typical Gate Charge @ Vgs (nC): 8.3(Max)@10V Typical Gate Charge @ 10V (nC): 8.3(Max) Typical Gate to Drain Charge (nC): 3.8(Max) Typical Gate to Source Charge (nC): 2.3(Max) Typical Reverse Recovery Charge (nC): 440 Typical Input Capacitance @ Vds (pF): 180@25V Typical Reverse Transfer Capacitance @ Vds (pF): 15@25V Minimum Gate Threshold Voltage (V): 2 Typical Output Capacitance (pF): 81 Maximum Power Dissipation (mW): 3700 Typical Fall Time (ns): 9.4 Typical Rise Time (ns): 16 Typical Turn-Off Delay Time (ns): 15 Typical Turn-On Delay Time (ns): 6.9 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Packaging: Tape and Reel Maximum Positive Gate Source Voltage (V): 20 Maximum Power Dissipation on PCB @ TC=25°C (W): 3.7 Maximum Pulsed Drain Current @ TC=25°C (A): 20 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 40 Typical Gate Plateau Voltage (V): 6.9 Typical Reverse Recovery Time (ns): 100 Maximum Diode Forward Voltage (V): 2.5 Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab Lead Shape: Gull-wing