Vishay . IRF630SPBF

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.21.00.95 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 200 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 9 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 400@10V Typical Gate Charge @ Vgs (nC): 43(Max)@10V Typical Gate Charge @ 10V (nC): 43(Max) Typical Gate to Drain Charge (nC): 23(Max) Typical Gate to Source Charge (nC): 7(Max) Typical Reverse Recovery Charge (nC): 1100 Typical Input Capacitance @ Vds (pF): 800@25V Typical Reverse Transfer Capacitance @ Vds (pF): 76@25V Minimum Gate Threshold Voltage (V): 2 Typical Output Capacitance (pF): 240 Maximum Power Dissipation (mW): 3000 Typical Fall Time (ns): 20 Typical Rise Time (ns): 28 Typical Turn-Off Delay Time (ns): 39 Typical Turn-On Delay Time (ns): 9.4 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Maximum Positive Gate Source Voltage (V): 20 Maximum Power Dissipation on PCB @ TC=25°C (W): 3 Maximum Pulsed Drain Current @ TC=25°C (A): 36 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 40 Typical Gate Plateau Voltage (V): 6 Typical Reverse Recovery Time (ns): 170 Maximum Diode Forward Voltage (V): 2 Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab Lead Shape: Gull-wing