Vishay N Channel Mosfet, 200V, 9A, Smd-220 - IRF630STRLPBF
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 41K2322 | 800 | 800 | 1 @ $0.94, 1000 @ $0.89, 2000 @ $0.84, 4000 @ $0.76, 6000 @ $0.73, 10000 @ $0.70 | |
 Galco | IRF630STRLPBF-VISH | 800 | 800 | 1 @ $0.74 | |
| 1Source | IRF630STRLPBF | 1 | 1 | ||
| Digi-Key | 2621882 | 1 | 1 | 1 @ $2.05, 10 @ $1.83, 100 @ $1.47 | |
 Radwell | IRF630STRLPBF | 1 | 19 | 1 | 1 @ $0.94 |
| Future Electronics | 4878278 | 1 | 800 | 1 | 1 @ $1.87, 50 @ $1.42, 100 @ $1.36, 250 @ $1.27, 500 @ $1.21 |
| Win Source | IRF630STRLPBF | 1 | 20140 | 1 | |
| Hotenda | H1822989 | 1 | 526 | 1 | 1 @ $1.66, 10 @ $1.49, 25 @ $1.41, 100 @ $1.20, 250 @ $1.13 |
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SILICONIX (VISHAY) IRF630STRLPBF Single N-Channel 200 V 0.4 Ohms Surface Mount Power Mosfet - TO-263 - 800 item(s)
Brand: SILICONIX (VISHAY)
Single N-Channel 200 V 0.4 Ohms Surface Mount Power Mosfet - TO-263 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 200 V
- Drain-sourceOnResistance-Max: 0.4 Ω
- QgGateCharge: 43 nC
- RatedPowerDissipation(P): 74 W
Listing
| Product group | BISS Basic |
|---|---|
| Product type | BISS |
| Model | IRF630STRLPBF |
| Part number | IRF630STRLPBF |
| Items per pack | 800 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF630STRLPBF |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | SILICONIX (VISHAY) |
IRF630STRLPBF, Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R (100 Items)
Brand: Vishay
EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 200 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 9 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 400@10V Typical Gate Charge @ Vgs (nC): 43(Max)@10V Typical Gate Charge @ 10V (nC): 43(Max) Typical Gate to Drain Charge (nC): 23(Max) Typical Gate to Source Charge (nC): 7(Max) Typical Reverse Recovery Charge (nC): 1100 Typical Input Capacitance @ Vds (pF): 800@25V Typical Reverse Transfer Capacitance @ Vds (pF): 76@25V Minimum Gate Threshold Voltage (V): 2 Typical Output Capacitance (pF): 240 Maximum Power Dissipation (mW): 3000 Typical Fall Time (ns): 20 Typical Rise Time (ns): 28 Typical Turn-Off Delay Time (ns): 39 Typical Turn-On Delay Time (ns): 9.4 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Positive Gate Source Voltage (V): 20 Maximum Power Dissipation on PCB @ TC=25°C (W): 3 Maximum Pulsed Drain Current @ TC=25°C (A): 36 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 40 Typical Gate Plateau Voltage (V): 6 Typical Reverse Recovery Time (ns): 170 Maximum Diode Forward Voltage (V): 2 Pin Count: 3 Standard Package Name: TO-263 Supplier Package: D2PAK Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab Lead Shape: Gull-wing