VISHAY . IRFR110PBF

VISHAY SILICONIX IRFR110PBF N CHANNEL MOSFET, 100V, 4.3A, D-PAK

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 4.3 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 540@10V Typical Gate Charge @ Vgs (nC): 8.3(Max)@10V Typical Gate Charge @ 10V (nC): 8.3(Max) Typical Input Capacitance @ Vds (pF): 180@25V Maximum Power Dissipation (mW): 2500 Typical Fall Time (ns): 9.4 Typical Rise Time (ns): 16 Typical Turn-Off Delay Time (ns): 15 Typical Turn-On Delay Time (ns): 6.9 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: DPAK Pin Count: 3 Standard Package Name: TO-252 Mounting: Surface Mount Package Height: 2.39(Max) Package Length: 6.73(Max) Package Width: 6.22(Max) PCB changed: 2 Tab: Tab

Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****