IRFR9010TRPBF-Vishay-MOSFETs

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 50 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 5.3 Maximum Gate Source Leakage Current (nA): 500 Maximum IDSS (uA): 250 Maximum Drain Source Resistance (mOhm): 500@10V Typical Gate Charge @ Vgs (nC): 6.1@10V Typical Gate Charge @ 10V (nC): 6.1 Typical Gate to Drain Charge (nC): 3.9 Typical Gate to Source Charge (nC): 2 Typical Reverse Recovery Charge (nC): 220 Typical Input Capacitance @ Vds (pF): 240@25V Typical Output Capacitance (pF): 160 Maximum Power Dissipation (mW): 25000 Typical Fall Time (ns): 35 Typical Rise Time (ns): 47 Typical Turn-Off Delay Time (ns): 13 Typical Turn-On Delay Time (ns): 6.1 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: DPAK Pin Count: 3 Standard Package Name: TO-252 Mounting: Surface Mount Package Height: 2.39(Max) Package Length: 6.73(Max) Package Width: 6.22(Max) PCB changed: 2 Tab: Tab