Vishay N Channel Mosfet, 60V, 14A, Ipak - IRFU024PBF

N CHANNEL MOSFET, 60V, 14A, IPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:14A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Process Technology: HEXFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 14 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 100@10V Typical Gate Charge @ Vgs (nC): 25(Max)@10V Typical Gate Charge @ 10V (nC): 25(Max) Typical Gate to Drain Charge (nC): 11(Max) Typical Gate to Source Charge (nC): 5.8(Max) Typical Reverse Recovery Charge (nC): 290 Typical Input Capacitance @ Vds (pF): 640@25V Typical Reverse Transfer Capacitance @ Vds (pF): 79@25V Minimum Gate Threshold Voltage (V): 2 Typical Output Capacitance (pF): 360 Maximum Power Dissipation (mW): 2500 Typical Fall Time (ns): 42 Typical Rise Time (ns): 58 Typical Turn-Off Delay Time (ns): 25 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Maximum Power Dissipation on PCB @ TC=25°C (W): 2.5 Maximum Pulsed Drain Current @ TC=25°C (A): 56 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 50 Typical Gate Plateau Voltage (V): 6.1 Typical Reverse Recovery Time (ns): 88 Maximum Diode Forward Voltage (V): 1.5 Maximum Positive Gate Source Voltage (V): 20 Supplier Package: IPAK Pin Count: 3 Standard Package Name: TO-251 Mounting: Through Hole Package Height: 6.22(Max) Package Length: 6.73(Max) Package Width: 2.39(Max) PCB changed: 3 Tab: Tab